Growth and properties of InGaAs nanowires on silicon-Reference-Cited by-同舟云学术

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Growth and properties of InGaAs nanowires on silicon

Published:2013-12-02 Issue:1 Volume:8 Page:11-30
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Koblmüller Gregor,Abstreiter Gerhard

Funder

Marie Curie FP7 Reintegration Grant

EU FP7 project SOLID

DFG excellence program Nanosystems Initiative Munich

collaborative research center SFB 631

Technische Universität München, Institute for Advanced Study, funded by the German Excellence Initiative

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201308207/fullpdf

Reference119 articles.

1. InxGa1-xAs Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics

2. Nanolasers grown on silicon

3. Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission

4. Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy

5. A III–V nanowire channel on silicon for high-performance vertical transistors

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