Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection-Reference-Cited by-同舟云学术

Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection

Published:2009-07-22 Issue:8 Volume:9 Page:2926-2934
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wei Wei¹,Bao Xin-Yu¹,Soci Cesare¹,Ding Yong¹,Wang Zhong-Lin¹,Wang Deli¹

Affiliation:

1. Materials Science and Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0418, Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0407, and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl901270n

Reference65 articles.

1. Vertical wrap-gated nanowire transistors

2. Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

3. Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

4. GaN nanowire lasers with low lasing thresholds

5. Room-Temperature Ultraviolet Nanowire Nanolasers

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