Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices-Reference-Cited by-同舟云学术

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Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Implications for Light-Emitting Devices

Published:2023-08-11 Issue:16 Volume:6 Page:15278-15293
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Oliva Miriam¹^ORCID,Flissikowski Timur¹,Góra Michał¹,Lähnemann Jonas¹,Herranz Jesús¹,Lewis Ryan B.¹^ORCID,Marquardt Oliver²^ORCID,Ramsteiner Manfred¹,Geelhaar Lutz¹^ORCID,Brandt Oliver¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5−7, 10117 Berlin, Germany

2. Weierstraß-Institut für angewandte Analysis und Stochastik, Mohrenstraße 39, 10117 Berlin, Germany

Funder

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Alexander von Humboldt-Stiftung

Berlin Mathematics Research Center MATH+

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c03242

Reference124 articles.

1. Gallium arsenide and other compound semiconductors on silicon

2. GaAs epitaxy on Si substrates: modern status of research and engineering

3. Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon

4. Threading defect elimination in GaN nanowires

5. III–V nanowire arrays: growth and light interaction

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