Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys
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Published:2024-04
Issue:
Volume:173
Page:108090
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Ramírez-López M.,
Cruz-Bueno J.J.ORCID,
Flores-Ramírez D.,
Villa-Martínez G.,
Trejo-Hernández R.,
Reséndiz-Mendoza L.M.,
Rodríguez-Fragoso P.,
Casallas-Moreno Y.L.