Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications-Reference-Cited by-同舟云学术

Growth mechanism and physical properties of the type-I In0.145Ga0.855As Sb1−y/GaSb alloys with low As content for near infrared applications

Published:2019-11 Issue: Volume:808 Page:151690
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Casallas-Moreno Y.L.^ORCID,Villa-Martínez G.,Ramírez-López M.,Rodríguez-Fragoso P.,Gómez-Herrera M.L.,Pérez-González M.,Escobosa-Echavarría A.,Tomás S.A.^ORCID,Herrera-Pérez J.L.,Mendoza-Álvarez J.G.

Funder

CONACYT

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

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