Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells
Author:
Affiliation:
1. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan
Funder
Aiming for the Top University Program of National Chiao Tung University and Ministry of Education of Taiwan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4898389
Reference25 articles.
1. Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5- to 2.7-$\mu$m Wavelength Range
2. High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
3. High-Power 2.2-$\mu$m Diode Lasers With Heavily Strained Active Region
4. Room-temperature operation of 3.26μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers
5. Type-I Diode Lasers for Spectral Region Above 3 μm
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1. Influence of atom segregation on the structure and luminescence of InGaAsSb/AlGaAsSb multiple quantum wells;Journal of Luminescence;2022-09
2. Si−doped In0.145Ga0.855As0.123Sb0.877: A novel p−type quaternary alloy with high crystalline quality;Solid State Sciences;2022-01
3. Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells;physica status solidi (RRL) – Rapid Research Letters;2021-05-02
4. The molecular beam epitaxy growth of InGaAsSb/AlGaAsSb quantum well on GaAs substrate with emission wavelength of∼ 2μm;Journal of Physics: Conference Series;2021-05-01
5. Mid- and long-infrared emission properties of InxGa1−xAsySb1−y quaternary alloy with Type-II InAs/GaSb superlattice distribution;Journal of Alloys and Compounds;2020-12
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