High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%-Reference-Cited by-同舟云学术

High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%

Published:2007-01 Issue:1 Volume:90 Page:011119
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shterengas L.,Belenky G.,Kisin M. V.,Donetsky D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2430012

Reference12 articles.

1. Sb-based monolithic VCSEL operating near 2.2 [micro sign]m at room temperature

2. Low Threshold High-Power Room-Temperature Continuous-Wave Operation Diode Laser Emitting at 2.26<tex>$muhboxm$</tex>

3. Light-Emitting Diodes Based on GaSb Alloys for the 1.6–4.4 μm Mid-Infrared Spectral Range

4. High-power high-brightness GaInAsSb-AlGaAsSb tapered laser arrays with anamorphic collimating lenses emitting at 2.05 /spl mu/m

5. Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3–2.7μm laser structures

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