Impact of graphene as 2D interlayer on the growth of GaAs by CSVT on Si (100) and GaAs (100) substrates-Reference-Cited by-同舟云学术

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Impact of graphene as 2D interlayer on the growth of GaAs by CSVT on Si (100) and GaAs (100) substrates

Published:2024-10 Issue: Volume:181 Page:108605
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Martínez-López A.L.,Cruz-Bueno J.J.^ORCID,Trejo-Hernández R.,Rocha-Robledo A.K.S.,de-Luna-Bugallo A.,Kudriavtsev Y.,García-Salgado G.,Casallas-Moreno Y.L.,Mendoza-Álvarez J.G.

Funder

Consejo Nacional de Humanidades, Ciencias y Tecnologías

Publisher

Elsevier BV

Reference48 articles.

1. Semiconducting and other major properties of gallium arsenide;Blakemore;J. Appl. Phys.,1982

2. Materials for integrated optics: GaAs;Conwell;Annu. Rev. Mater. Sci.,1978

3. Discovery of III–V semiconductors: physical properties and application;Mikhailova;Semiconductors,2019

4. Physical Properties of III‐V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP;Adachi,1992

5. Recent progress in semiconductor lasers — cw GaAs lasers are now ready for new applications;Hayashi;Appl. Phys.,1974

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