Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon-Reference-Cited by-同舟云学术

Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Published:2015-12-30 Issue:1 Volume:16 Page:182-187
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Thompson Michael D.¹,Alhodaib Aiyeshah¹,Craig Adam P.¹,Robson Alex¹,Aziz Atif¹,Krier Anthony¹,Svensson Johannes²,Wernersson Lars-Erik²,Sanchez Ana M.³,Marshall Andrew R. J.¹

Affiliation:

1. Department of Physics, Lancaster University, Lancaster, LA1 4YB, United Kingdom

2. Electrical and Information Technology, Lund University, Box 118, SE-221 00 Lund, Sweden

3. Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Royal Academy of Engineering

Vetenskapsrådet

Seventh Framework Programme

Stiftelsen för Strategisk Forskning

Defence Science and Technology Laboratory

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b03449

Reference26 articles.

1. III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications

2. Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon

3. Equilibrium limits of coherency in strained nanowire heterostructures

4. Defect-free InP nanowires grown in [001] direction on InP (001)

5. Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

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