Photocurrents in a Single InAs Nanowire/Silicon Heterojunction-Reference-Cited by-同舟云学术

Photocurrents in a Single InAs Nanowire/Silicon Heterojunction

Published:2015-09-11 Issue:10 Volume:9 Page:9849-9858
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Brenneis Andreas¹²,Overbeck Jan¹²,Treu Julian¹,Hertenberger Simon¹,Morkötter Stefanie¹,Döblinger Markus³,Finley Jonathan J.¹²,Abstreiter Gerhard¹⁴,Koblmüller Gregor¹,Holleitner Alexander W.¹²

Affiliation:

1. Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, 85748 Garching, Germany

2. Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799 Munich, Germany

3. Department of Chemistry, Ludwig Maximilians Universität München, Butenandtstr. 11, 81377 Munich, Germany

4. Institut for Advanced Study, Technische Universität München, Lichtenbergstrasse 2a, 85748 Garching, Germany

Funder

European Research Council

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b03017

Reference61 articles.

1. Epitaxial III−V Nanowires on Silicon

2. Position-controlled epitaxial III–V nanowires on silicon

3. Growth of InAs Nanowires on SiO2 Substrates: Nucleation, Evolution, and the Role of Au Nanoparticles

4. Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

5. Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

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