Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1413718
Reference17 articles.
1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
2. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
3. Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy
4. First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT
5. Compensation and diffusion mechanisms of carbon dopants in GaAs
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1. Burn-in effect in InGaP/GaAs HBT with intrinsically or extrinsically carbon doped base layer;Physica Scripta;2023-05-04
2. Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies;Applied Physics Letters;2013-06-24
3. Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors;Journal of Crystal Growth;2008-11
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