Characterization of heavily carbon‐doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351776
Reference18 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. Zinc Doping of MOCVD GaAs
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4. Generation-Recombination Current in the Emitter-Base Junction of AlGaAs/GaAs HBTs
5. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy
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