Compensation and diffusion mechanisms of carbon dopants in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.17436/fulltext
Reference23 articles.
1. Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy
2. Strain relaxation and compensation due to annealing in heavily carbon‐doped GaAs
3. Heavily carbon‐doped GaAlAs grown by vacuum chemical epitaxy
4. Carbon redistribution during molecular beam epitaxy of GaAsn‐i‐p+‐i‐nstructures using trimethylgallium as thep‐type dopant
5. Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
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