Strain relaxation and compensation due to annealing in heavily carbon‐doped GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106167
Reference14 articles.
1. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs
2. p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
3. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
4. Intentional ρ-type doping by carbon in metalorganic MBE of GaAs
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