p‐type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103889
Reference9 articles.
1. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
2. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
3. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
4. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
5. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
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