Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100187
Reference12 articles.
1. Photoluminescence Study of Carbon Doped Gallium Arsenide
2. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
3. Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy
4. Control of Be diffusion in molecular beam epitaxy GaAs
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