Intrinsic defects in GaAs and InGaAs through hybrid functional calculations
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. Electrical Properties of III-V/Oxide Interfaces
2. Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
3. Analysis of trap state densities at HfO2/In0.53Ga0.47As interfaces
4. A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
5. Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
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2. Shockley-Read-Hall recombination and trap levels in In0.53Ga0.47As point defects from first principles;Physical Review B;2023-09-26
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5. First-principles studies on cation point defects in LiTi2O4;Physica B: Condensed Matter;2022-08
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