First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT-Reference-Cited by-同舟云学术

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First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT

Published:1991 Issue:3 Volume:27 Page:253
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Delage S.L.,Di Forte-Poisson M.A.,Blanck H.,Brylinski C.,Chartier E.,Collot P.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910163?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor;Journal of Applied Physics;2003-01

2. Carbon reactivation kinetics in the base of heterojunction GaInP–GaAs bipolar transistors;Applied Physics Letters;2002-05-13

3. Carbon reactivation kinetics in GaAs: Its dependence on dopant precursor, doping level, and layer thickness;Journal of Applied Physics;2002-05

4. GaAs-based materials for heterojunction bipolar transistor's: reliability results and MMIC applications;Materials Science in Semiconductor Processing;2001-12

5. Carbon acceptor doping efficiency in GaAs grown by metalorganic chemical vapor deposition;Applied Physics Letters;2001-11-05

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