Finding interstitial oxygen in an Si substrate during low-temperature plasma oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1568168
Reference10 articles.
1. Effects of inductively coupled plasma oxidation on the properties of polycrystalline silicon films and thin film transistors
2. A study on the oxidation kinetics of silicon in inductively coupled oxygen plasma
3. Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition
4. Infrared spectrum of interstitial oxygen in silicon
5. A study of thin silicon dioxide films using infrared absorption techniques
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3. Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy;Journal of Applied Physics;2014-10-14
4. Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature;Journal of Crystal Growth;2014-10
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