Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature-Reference-Cited by-同舟云学术

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Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Published:2014-10 Issue: Volume:404 Page:246-255
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Matteini Federico,Tütüncüoğlu Gözde,Rüffer Daniel,Alarcón-Lladó Esther,Fontcuberta i Morral Anna

Funder

ERC Starting Grant ‘UpCon’, ERANET-RUS InCoSiN,ITN

SNF

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference44 articles.

1. Gallium arsenide p-i-n radial structures for photovoltaic applications;Colombo;Appl. Phys. Lett.,2009

2. Self-assembled quantum dots in a nanowire system for quantum photonics;Heiss;Nat. Mater.,2013

3. Single nanowire solar cells beyond the Shockley–Queisser Limit;Krogstrup;Nat. Photon.,2013

4. Trap-assisted tunneling in Si–InAs nanowire heterojunction tunnel diodes;Bessire;Nano Lett.,2011

5. Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures;Ohlsson;Physica E,2002

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