Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy-Reference-Cited by-同舟云学术

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Investigation of interface states distribution in metal-oxide-semiconductor structures with very thin oxides by acoustic spectroscopy

Published:2014-10-14 Issue:14 Volume:116 Page:144302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bury P.¹,Bellan I.¹,Kobayashi H.²,Takahashi M.²³,Matsumoto T.²

Affiliation:

1. Department of Physics, Žilina University, Univerzitná 1, 010 26 Žilina, Slovakia

2. Institute of Scientific and Industrial Research, Osaka University, CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

3. School of Computer Science, Tokyo University of Technology, 1404-1, Katakura, Hachioji, Tokyo 192-0982, Japan

Funder

R&D operation programCEX

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4897454

Reference32 articles.

1. Finding interstitial oxygen in an Si substrate during low-temperature plasma oxidation

2. Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure

3. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acoustoelectric Effect in Semiconductor Structures - Tool for Interface States Investigation by Complex Acoustic Spectroscopy;Acta Acustica united with Acustica;2016-07-01

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