Effects of inductively coupled plasma oxidation on the properties of polycrystalline silicon films and thin film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123939
Reference16 articles.
1. Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing
2. Control of the performance of polysilicon thin-film transistor by high-gate-voltage stress
3. Device sensitivity of field-plated polysilicon high-voltage TFTs and their application to low-voltage operation
4. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
5. Electrical characteristics of MOSFET's utilizing Oxygen—Argon sputter-deposited gate Oxide films
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1. Low-Temperature Growth of N-doped SiO2Layer Using Inductively-Coupled Plasma Oxidation and Its Effect on the Characteristics of Thin Film Transistors;Korean Journal of Materials Research;2009-01-31
2. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics;Journal of Physics D: Applied Physics;2009-01-21
3. Properties of microwave plasma torch operating at a low pressure;Physics of Plasmas;2008-10
4. High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing;Journal of Non-Crystalline Solids;2006-06
5. Improvement of Silicon Dioxide Film as a Gate Insulator for Poly-Si TFTs Fabricated at 150 C with N2O Plasma Pretreatment;Electrochemical and Solid-State Letters;2006-02-01
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