High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing-Reference-Cited by-同舟云学术

High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing

Published:2006-06 Issue:9-20 Volume:352 Page:1434-1437
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Han Sang-Myeon,Shin Moon-Young,Park Joong-Hyun,Han Min-Koo

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. N.D. Young, I.D. French, M.J. Trainor, D.T. Murley, D.J. McCulloch, R.W. Wilks, Int. Display Workshop (IDW) 99, Sendai, Japan, 1999, p. 219.

2. K. Yuda, K. Sera, F. Uesugi, I. Nishiyama, F. Okumura, Int. Electron Dev. Meeting (IEDM), San Francisco, USA, 1994, p. 519.

3. High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110°C

4. Tech. Dig. SID;Tung,1998

5. Innovative nitride passivated pseudomorphicGaAs HEMTs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Speed, Flexible Electronics by Use of Si Nanomembranes;Silicon Nanomembranes;2016-04-08

2. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymeric Gate Dielectric on a Flexible Substrate;Japanese Journal of Applied Physics;2013-07-01

3. Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics;ECS Journal of Solid State Science and Technology;2013

4. Electrical Properties of Ultrathin SiO$_{2}$ Layer Deposited at 50 $^{\circ}$C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition;Applied Physics Express;2012-01-30

5. Complementary Logic Gates and Ring Oscillators on Plastic Substrates by Use of Printed Ribbons of Single-Crystalline Silicon;IEEE Electron Device Letters;2008-01