Suppression of Oxygen Vacancy and Enhancement in Bias Stress Stability of High-Mobility ZnO Thin-Film Transistors with N2O Plasma Treated MgO Gate Dielectrics
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
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5. Determination of band offset in MgO/InP heterostructure by X-ray photoelectron spectroscopy;Vacuum;2016-12
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