Nitric acid oxidation of Si method at 120 °C: HNO3 concentration dependence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3296395
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1. Low-Temperature Poly-Si Thin-Film Transistor with a N[sub 2]O-Plasma ONO Multilayer Gate Dielectric
2. Electrical Properties of Bulk Silicon Dioxide and SiO[sub 2]/Si Interface Formed by Tetraethylorthosilicate-Ozone Chemical Vapor Deposition
3. Characteristics of TEOS Polysilicon Oxides: Improvement by CMP and High Temperature RTA N[sub 2]/N[sub 2]O Annealing
4. Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas
5. Effects of O2- and N2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
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