Ambipolar Passivated Back Surface Field Layer for Silicon Photovoltaics-Reference-Cited by-同舟云学术

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Ambipolar Passivated Back Surface Field Layer for Silicon Photovoltaics

Published:2020-09-13 Issue:50 Volume:30 Page:2004943
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kang Sung Bum¹,Park Won Jin¹,Jeong Myeong Hoon¹,Kang So‐Huei²,Yang Changduk²,Choi Kyoung Jin¹^ORCID

Affiliation:

1. School of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

2. School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Ulsan National Institute of Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202004943

Reference99 articles.

1. Micrometre-scale silicon electro-optic modulator

2. Neuromorphic Organic Devices that Specifically Discriminate Dopamine from Its Metabolites by Nonspecific Interactions

3. Highly Stable Contact Doping in Organic Field Effect Transistors by Dopant‐Blockade Method

4. Multiresonant Thermally Activated Delayed Fluorescence Emitters Based on Heteroatom‐Doped Nanographenes: Recent Advances and Prospects for Organic Light‐Emitting Diodes

5. Bidirectional All‐Optical Synapses Based on a 2D Bi 2 O 2 Se/Graphene Hybrid Structure for Multifunctional Optoelectronics

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