A study on the oxidation kinetics of silicon in inductively coupled oxygen plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371320
Reference15 articles.
1. Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma
2. Effects of inductively coupled plasma oxidation on the properties of polycrystalline silicon films and thin film transistors
3. Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing
4. Oxidation of silicon in plasma afterglows: New model of oxide growth including recombination of diffusing O atoms
5. Kinetics of the silicon dioxide growth process in afterglows of microwave‐induced plasmas
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