Oxidation of silicon in plasma afterglows: New model of oxide growth including recombination of diffusing O atoms
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353107
Reference35 articles.
1. General Relationship for the Thermal Oxidation of Silicon
2. On the Kinetics of the Thermal Oxidation of Silicon: II . Some Theoretical Evaluations
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