Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1475370
Reference29 articles.
1. Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
2. Material for future InP-based optoelectronics: InGaAsP versus InGaAlAs
3. Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
4. Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications
5. Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications
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1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01
2. Different spectral features near the energy bandgaps of normal and inverse heterostructures of In<sub>0.52</sub>Al<sub>0.48</sub>As/InP;Acta Physica Sinica;2024
3. Effect of Piezoelectric Filed on the Optical Properties of (311) A and (311) B Oriented InAlAs/InP Heterostructures;Perovskite and Piezoelectric Materials;2021-01-27
4. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes;Journal of Materials Science: Materials in Electronics;2020-05-29
5. Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures;Japanese Journal of Applied Physics;2020-01-24
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