Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab65a6/pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation;AIP Advances;2024-01-01
2. Different spectral features near the energy bandgaps of normal and inverse heterostructures of In<sub>0.52</sub>Al<sub>0.48</sub>As/InP;Acta Physica Sinica;2024
3. Gallium Phosphide Nanowires Grown on SiO2 by Gas-Source Molecular Beam Epitaxy;Crystal Growth & Design;2023-03-10
4. Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation;Materials Science in Semiconductor Processing;2023-01
5. Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications;Optics & Laser Technology;2022-04
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