Growth and characterization of type-II/type-I AlGaInAs/InP interfaces-Reference-Cited by-同舟云学术

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Growth and characterization of type-II/type-I AlGaInAs/InP interfaces

Published:1992-11 Issue:1-4 Volume:124 Page:589-595
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sacilotti M.,Motisuke F.,Monteil Y.,Abraham P.,Iikawa F.,Montes C.,Furtado M.,Horiuchi L.,Landers R.,Morais J.,Cardoso L.,Decobert J.,Waldman B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. SPIE Intern. Conf.;Quillec,1990

2. Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications

3. SPIE Intern. Conf.;Capasso,1990

4. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification

5. Investigations of the quantum photovoltaic effect in InAs‐GaSb semiconductor superlattices

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2. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes;Journal of Materials Science: Materials in Electronics;2020-05-29

3. Early stages of InP nanostructure formation on AlInAs;Physical Review B;2020-04-27

4. Electronic and optical properties of Al Ga In1As quaternary alloys with and without relaxation lattice matched to InP for laser applications: First-principles study;Optik;2016-08

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