Processing and crystallographic structure of non-equilibrium Si-doped HfO2
Author:
Affiliation:
1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
2. School of Information Science and Technology, Northwest University, Xi'an 710127, China
Funder
Scientific and Technological Research Projects in ShaanXi Province, China
U.S. Department of Education (DoED)
China Scholarship Council (CSC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4923023
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Ferroelectric phenomena in Si-doped HfO2thin films with TiN and Ir electrodes
3. Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric
4. The effects of layering in ferroelectric Si-doped HfO2 thin films
5. Impact of different dopants on the switching properties of ferroelectric hafniumoxide
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3. Swift heavy ion irradiation assisted Si nanoparticle formation in HfSiOx nano-composite thin films deposited by RF magnetron sputtering method;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-05
4. Structures, Phase Equilibria, and Properties of HfO2;Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices;2019
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