Tantalum doping in HfO2: orthorhombic phase formation at ambient conditions and change in path of pressure-induced structural evolution-Reference-Cited by-同舟云学术

Tantalum doping in HfO2: orthorhombic phase formation at ambient conditions and change in path of pressure-induced structural evolution

Published:2020-05-20 Issue:3 Volume:40 Page:434-443
ISSN:0895-7959
Container-title:High Pressure Research
language:en
Short-container-title:High Pressure Research

Author:

Pathak S.¹²^ORCID,Das P.¹²^ORCID,Sahu M.²³^ORCID,Pandey K. L.³,Mandal G.⁴^ORCID,Patkare G. R.⁵

Affiliation:

1. Experimental Nuclear Physics Division, Variable Energy Cyclotron Centre, Kolkata, India

2. Homi Bhabha National Institute, Mumbai, India

3. Radioanalytical Chemistry Division, Bhabha Atomic Research Centre, Mumbai, India

4. Centre for Rural and Cryogenic Technologies, Jadavpur University, Kolkata, India

5. Technical Physics Division, Bhabha Atomic Research Centre, Mumbai, India

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/08957959.2020.1765338

Reference47 articles.

1. Structural, electronic, optical, elastic properties and Born effective charges of monoclinic HfO 2 from first-principles calculations

2. Huang AP, Yang ZC, Chu PK. Hafnium-based high-k gate dielectrics. In: Chu PK, editor. Advances in solid state circuits technologies. Croatia: INTECH; 2010.

3. Pressure-induced phase transformations inHfO2to 50 GPa studied by Raman spectroscopy

4. Pressure-induced phase transitions and volume changes inHfO2up to 50 GPa

5. X-ray diffraction study of Hafnia under high pressure using synchrotron radiation

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