Structure of HfO2 modified with Y, Gd, and Zr at ambient conditions and high pressures
Author:
Affiliation:
1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
2. Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA
Funder
U.S. Department of Energy
Army Research Office
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5121024
Reference41 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
3. Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric
4. Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices
5. Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
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3. Modulating the microscopic lattice distortions through the Al-rich layers for boosting the ferroelectricity in Al:HfO2 nanofilms;Journal of Physics D: Applied Physics;2022-09-15
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