Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices-Reference-Cited by-同舟云学术

Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices

Published:2017-04-12 Issue:21 Volume:27 Page:1700461
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Yu Hyeonggeun¹,Chung Ching‐Chang¹,Shewmon Nate¹,Ho Szuheng¹,Carpenter Joshua H.²,Larrabee Ryan¹,Sun Tianlei³,Jones Jacob L.¹,Ade Harald²,O'Connor Brendan T.³,So Franky¹

Affiliation:

1. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27606 USA

2. Department of Physics North Carolina State University Raleigh NC 27606 USA

3. Department of Mechanical Engineering North Carolina State University Raleigh NC 27606 USA

Funder

National Science Foundation

Army Research Office

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201700461

Reference39 articles.

1. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

2. Fatigue-free ferroelectric capacitors with platinum electrodes

3. Ferroelectric Memories

4. High-performance solution-processed polymer ferroelectric field-effect transistors

5. Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation

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