Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

Author:

Yan Fengjun1ORCID,Wu Yao1,Liu Yilong1,Ai Pu1,Liu Shi2ORCID,Deng Shiqing3ORCID,Xue Kan-Hao1ORCID,Fu Qiuyun14,Dong Wen14

Affiliation:

1. School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China

2. Key Laboratory for Quantum Materials of Zhejiang Province & Department of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China

3. Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China

4. Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518000, P. R. China

Abstract

“Multiscale structural optimization” is assumed a next step to further optimize the unconventional ferroelectricity in HfO2 for high-performance HfO2-based ferroelectrics and devices.

Funder

National Key Research and Development Program of China

Wuhan National Laboratory for Optoelectronics

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Reference124 articles.

1. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

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3. Thin‐Film Ferroelectrics

4. Ferroelectric Memories

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