The reaction probability of XeF2with silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331856
Reference18 articles.
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3. A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2in CnFm/H2and CnFm/O2plasmas
4. A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2in CnFm/H2and CnFm/O2plasmas
5. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
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1. Role of sulfur in catalyzing fluorine atom fast etching of silicon with smooth surface morphology;Journal of Vacuum Science & Technology A;2019-12
2. Review Article: Reactions of fluorine atoms with silicon, revisited, again;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-09
3. Mechanism and dynamics of the reaction of XeF2 with fluorinated Si(100): Possible role of gas phase dissociation of a surface reaction product in plasmaless etching;The Journal of Chemical Physics;2009-04-28
4. Investigations on the mechanism of silicon etching with chlorine-trifluoride;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
5. Comparison of the Interactions of XeF2 and F2 with Si(100)(2 × 1);The Journal of Physical Chemistry B;2002-07-10
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