Etching of SiO2 and Si in a He-F2 plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference9 articles.
1. C. M. Melliar-Smith and C. J. Mogab, inThin Film Processing, edited by J. L. Vossen and W. Kern (Academic, New York, 1979), p. 497.
2. The etching of silicon with XeF2vapor
3. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
4. Reaction of fluorine atoms with SiO2
5. A comparative study of the radio frequency discharge in gas mixtures of helium with flourine, oxygen, nitrogen, and argon
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1. Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures;Journal of The Electrochemical Society;1991-10-01
2. Nonlocal transport models of the self‐consistent potential distribution in a plasma sheath with charge transfer collisions;Journal of Applied Physics;1988-12
3. Sheath collision processes controlling the energy and directionality of surface bombardment in O2reactive ion etching;Journal of Applied Physics;1988-07-15
4. Etching of SiO2 in a narrowly confined plasma of high power density;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-09
5. Anisotropic etching of silicon using an SF6/Ar microwave multipolar plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1986-01
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