A kinetic study of the plasma‐etching process. I. A model for the etching of Si and SiO2in CnFm/H2and CnFm/O2plasmas
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331074
Reference55 articles.
1. Plasma etching in integrated circuit manufacture—A review
2. Control of relative etch rates of SiO2 and Si in plasma etching
3. Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its Compounds
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