Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated SiN Films Using HF/H2 and CF4/H2 Plasmas
Author:
Affiliation:
1. Center for Low-Temperature Plasma Sciences, Nagoya University, Nagoya 464-8603, Japan
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01258
Reference59 articles.
1. Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
2. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas
3. Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas
4. Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures
5. Role of nitrogen in the downstream etching of silicon nitride
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1. Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition;Electronics;2024-07-15
2. Etching selectivity of SiO2 to SiN using HF and methanol at higher pressures up to 900 Pa;Japanese Journal of Applied Physics;2024-06-03
3. Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions;Small Methods;2024-06-02
4. Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride;Applied Surface Science;2024-05
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