Funder
Korea Ministry of Trade Industry and Energy
KBSI
KSRC
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference55 articles.
1. D.A. Cathey, J.B. Rolfson, V.A. Ward, K.M. Winchester, Etch stop for use in etching of silicon oxide, US6222257B1, 2001. https://patents.google.com/patent/US6222257B1/en (accessed June 16, 2023).
2. Suppression of boron transport out of p+ polycrystalline silicon at polycrystalline silicon dielectric interfaces;Wu;J. Vacuum Sci. Technol. B: Microelectron. Nanometer Struct.,1999
3. Local oxidation of silicon and its application in semiconductor-device technology;Appels;Plilips Res. Repts.,1970
4. Generation of cavities in silicon wafers by laser ablation using silicon nitride as sacrificial layer;Lerner;Appl Surf Sci.,2012
5. The Etching of Silicon Nitride in Phosphoric Acid with Silicon Dioxide as a Mask;van Gelder;J Electrochem Soc.,1967