Generation of cavities in silicon wafers by laser ablation using silicon nitride as sacrificial layer-Reference-Cited by-同舟云学术

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Generation of cavities in silicon wafers by laser ablation using silicon nitride as sacrificial layer

Published:2012-01 Issue:7 Volume:258 Page:2914-2919
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lerner B.,Perez M.S.,Toro C.,Lasorsa C.,Rinaldi C.A.,Boselli A.,Lamagna A.

Funder

Comision Nacional de Energia Atomica (CNEA)

Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET)

ANPCyT

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference12 articles.

1. Fabrication of nanopores in silicon chips using feedback chemical etching;Park;Small,2007

2. Electrothermally activated microchips for implantable drug delivery and biosensing;Maloney;J. Control. Release,2005

3. Anisotropic etching of crystalline silicon in alkaline solutions;Seidel;J. Electrochem. Soc.,1990

4. Laser Fabrication and Machining of Materials;Dahotre,2008

5. Optical emission and energy disposal characterization of the laser ablation process of CaF2, BaF2, and NaCl at 1064nm;Villagran-Muniz;J. Appl. Phys.,2008

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