Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation Layers-Reference-Cited by-同舟云学术

Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation Layers

Published:1990-11-01 Issue:11 Volume:137 Page:3612-3626
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Seidel H.¹²³⁴,Csepregi L.¹²³⁴,Heuberger A.¹²³⁴,Baumgärtel H.¹²³⁴

Affiliation:

1. Messerschmitt‐Bölkow‐Blohm GmbH, D‐8000 Munich 80, Germany

2. Fraunhofer‐Institut für Festkörpertechnologie, D‐8000 Munich 60, Germany

3. Fraunhofer‐Institut für Mikrostrukturtechnik, D‐1000 Berlin 33, Germany

4. Institut für Physikalische Chemie, Freie Universität Berlin, D‐1000 Berlin 33, Germany

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086277/pdf

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