Mechanism and dynamics of the reaction of XeF2 with fluorinated Si(100): Possible role of gas phase dissociation of a surface reaction product in plasmaless etching-Reference-Cited by-同舟云学术

Mechanism and dynamics of the reaction of XeF2 with fluorinated Si(100): Possible role of gas phase dissociation of a surface reaction product in plasmaless etching

Published:2009-04-28 Issue:16 Volume:130 Page:164714
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Hefty R. C.,Holt J. R.,Tate M. R.,Ceyer S. T.

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3118629

Reference53 articles.

1. Etch rates for micromachining processing

2. Bistable microelectrothermal actuator in a standard complementary metal-oxide-semiconductor process

3. Hybrid postprocessing etching for CMOS-compatible MEMS

4. Bulk micromachining of silicon

5. The effects of fluorine on parametrics and reliability in a 0.18-μm 3.5/6.8 nm dual gate oxide CMOS technology

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photochemical Fluorination of TiO₂(110) Produces an Atomically Thin Passivating Layer;The Journal of Physical Chemistry C;2022-03-04

2. Manipulating Etch Selectivities in XeF₂ Vapour Etching;Journal of Microelectromechanical Systems;2021-02

3. Fabrication of microparabolic reflector for infrared antenna coupled detectors;Micro & Nano Letters;2018-09

4. Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF6/O2 plasma;Japanese Journal of Applied Physics;2018-08-06

5. Determination of etching parameters for pulsed XeF2etching of silicon using chamber pressure data;Journal of Micromechanics and Microengineering;2018-02-15