Determination of etching parameters for pulsed XeF2etching of silicon using chamber pressure data
Author:
Funder
National Science Foundation
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6439/aaa74e/pdf
Reference37 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
2. The etching of silicon with XeF2vapor
3. Effective methods to prevent stiction during post-release-etch processing
4. Free ultra-high-Q microtoroid: a tool for designing photonic devices
5. Isotropic Silicon Etching With $\hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications
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