Si (111) substrates as highly effective pseudomasks for selective growth of GaN material and devices by ammonia-molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2199457
Reference9 articles.
1. Selective area growth of GaN using gas source molecular beam epitaxy
2. Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy
3. Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
4. High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
5. AlGaN∕GaN HEMTs on Si(111) with 6.6 W∕mm output power density
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1. Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth;Semiconductor Science and Technology;2021-05-28
2. Influence of Si Substrate Preparation Procedure on Polarity of Self-Assembled GaN Nanowires on Si(111): Kelvin Probe Force Microscopy Studies;Electronics;2020-11-13
3. Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer;Nanotechnology;2020-02-13
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5. Abnormal variation of the growth rate under high NH3injected regime in the growth of GaN by NH3-source MBE;Japanese Journal of Applied Physics;2017-02-10
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