Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect
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1. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy;Journal of Crystal Growth;2015-10
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4. Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate;Journal of Crystal Growth;2011-05
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