GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405422
Reference18 articles.
1. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
2. Shortest wavelength semiconductor laser diode
3. Nitride-based semiconductors for blue and green light-emitting devices
4. Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy
5. Conditional Quantum Dynamics and Logic Gates
Cited by 62 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure;Applied Surface Science;2024-05
2. Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow;Applied Physics Letters;2022-01-31
3. Simulating the electronic properties of semiconductor nanostructures using multiband k·p models;Computational Materials Science;2021-06
4. Application of quantum dots in electronics;Green Sustainable Process for Chemical and Environmental Engineering and Science;2021
5. Nitride single photon sources;Semiconductor Nanodevices;2021
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3