Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1413956
Reference13 articles.
1. Anisotropic epitaxial lateral growth in GaN selective area epitaxy
2. Pendeoepitaxy of gallium nitride thin films
3. Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition
4. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
5. GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy
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1. Batch processing of aluminum nitride by atomic layer deposition from AlCl3 and NH3;Journal of Vacuum Science & Technology A;2019-03
2. InGaN/GaN micro mirror with electrostatic comb drive actuation integrated on a patterned silicon-on-insulator wafer;Optics Express;2018-03-15
3. III-nitride grown on freestanding GaN nanostructures;physica status solidi (c);2012-02-29
4. Effect of mask material on selective growth of GaN by RF-MBE;Journal of Crystal Growth;2011-06
5. Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy;Semiconductor Science and Technology;2011-03-08
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