Thermal stability of InGaAs/InGaAsP quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352882
Reference37 articles.
1. Strained-layer InGaAs/InGaAsP MQW structures and their application to 1.67 μm lasers grown by metalorganic vapor phase epitaxy
2. Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
3. Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells
4. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures
5. Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices
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1. Investigation of ion implantation induced intermixing in InP based quaternary quantum wells;Journal of Physics D: Applied Physics;2011-11-08
2. Ion beam modification of strained InGaAs/InP characterized by HRXRD, PL and AFM;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-08
3. Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing;Journal of Applied Physics;2008-04-15
4. Ion beam modification studies of InP based multi quantum wells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
5. Swift heavy ion irradiated InGaAs/InP multi quantum wells: Band-structure, interface and surface modifications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-02
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